*POLYFET RF DEVICES *10/22/97 rename L88012 with LP801 *PHONE:(805)484-4210; FAX:(805)3393 CONTACT: MR. S.K. LEONG *HIGH POWER, HIGH FREQUENCY, RF N-CHANNEL DMOS MOSFET *NOTE:-HP/EESOF USES 'GATE DRAIN SOURCE' ORDER *Vg=3.0V; Id=100.25ma * D G S * .SUBCKT LP801/PF 20 10 30 LGATE 10 11 0.631N RGATE 11 12 0.396 CG 10 30 2.411P CRSS 12 17 1.084P CISS 12 14 30.45P LS 14 30 0.057N CS 14 30 1.882P LD 17 20 0.807N CD 20 30 2.493P R_RC 16 17 1255.8 C_RC 14 16 108.4P MOS 13 12 14 14 LP801MOS L=1.5U W= 0.04 ;D G S B LEVEL1 JFET 17 14 13 LP801JF ;D G S DBODY 14 17 LP801DB ;P N .MODEL LP801MOS NMOS(VTO=2.4 KP=1.25E-5 LAMBDA=0.15 RD= 0.25 RS= 0.5) .MODEL LP801JF NJF (VTO=-6.8 BETA=0.2 LAMBDA=5) .MODEL LP801DB D (CJO=57.0P RS=0.25 VJ=.4 M=0.4 BV= 65.0) .ENDS *$