| GaN | 48 Volt | |||||||||||
| Part No | Pout W | Freq Mhz | Gain dB | theta jc | gm mho | Idsat A | Ciss pf | Crss pf | Coss pf | Die | Style | Pkg |
| GP041 | 10 | 1000 | 11 | 5.20 | 0 | 0 | 4 | 0.15 | 2 | 1 | Single Ended | GP |
| GP141 | 35 | 2000 | 11 | 3.90 | 0 | 0 | 12.5 | 0.4 | 5.5 | 1 | Single Ended | GP |
| GX141 | 35 | 2000 | 11 | 3.70 | 0 | 0 | 12.5 | 0.4 | 5.5 | 1 | Single Ended | GX |
| GX241 | 70 | 2000 | 11 | 3.10 | 0 | 0 | 18.5 | 0.6 | 8.5 | 1 | Single Ended | GX |
| GX341 | 85 | 2000 | 11 | 2.60 | 0 | 0 | 23 | 0.85 | 10.5 | 1 | Single Ended | GX |
|
Product |
Part Number | Frequency | Min. Gain | Power Output | Pack-age | App Note | VDD | |
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|
20-512 Mhz | 37 dB | 60W | Case L | 28V | ||
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MSCQ01 | 20-512 Mhz | 8 dB | 80 Watts | Case S | 28V | ||
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MBDQ03 | 30-512 Mhz | 10 dB | 50 Watts | Case B | 28V | ||
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MCCR211 | 30-600 Mhz | 20 dB | 10 Watts | Case C | 12.5V |
Please call your local Representative
or the factory for additional information.
We manufacture our products in a World Class Wafer Facility. Advanced techniques of dry etching and mask steppers are used to improve uniformity of the transistor from production batch to production batch. Sub-micron process technology is used to achieve high performance. The transistors are manufactured by ion implant diffusion techniques.
Polyfet continues to make product improvements in both her Vdmos and Ldmos lines. The higher input impedance of the Vdmos makes input matching simpler, especially for broadband frequencies. The lower gain of the Vdmos facilitates simpler stabilizing circuitry at lower frequencies. The low parasitic capacitances of the Ldmos makes it suitable for high frequency operations at high efficiencies.
We have renamed our Ldmos transistors with a New Product
Numbering System. You can look up a cross reference and learn about this
improved product I.D. system.