Latest offerings from the Polyfet Team!
For a complete list of our LDMOS transistor offering,  ldmos shortform
For a complete list of our VDMOS transistor offering,  vdmos shortform 
For a complete list of our GaN transistor offering,  Gan shortform 
Sample and production quantities are now available for the following devices:-
Transistors New Product LDMOS High Power High Efficiciency Transistors
Part No Pout W Freq Mhz Gain dB theta jc gm mho Idsat  A Ciss pf Crss pf Coss pf Style Pkg
LA2541 200 500 16 0.38 7.5 21 122 2 45 Push - Pull LA
LS2541 200 500 16 0.38 7.5 21 122 2 45 Push - Pull LS
LK2201 50 1000 17 1.2 2.8 7.5 40 0.8 15.2 Push - Pull AK
LQ2001 20 1000 19 1.5 1 2.8 17 0.3 6 Push - Pull AQ
GP3441 50 2500 11 3.6 0 8.5 10 0.45 6 Single Ended GP
Part Number Frequency  Min Mhz Frequency Max Mhz Min. Gain   dB Power Output VDD  
MCCQ04 20 520 27 15 24
MTDQ01 20 520 13 50 24
Application Notes
Demo Amp  Frequency Mhz Min. Gain dB Power Output Watts Transistors # of Stages Description
TB256 20-3000 10 5 GP2001 1 Ultra Broadband, surface-mount
TB257 20-2500 10 10 G22001 1 Ultra Broadband, surface-mount
TB259 20-2000 13 10 G22001 1 Hand Held VHF_UHF Radio 
TB260 136-870 16 7 G21001 1 Broadband, 48V GaN
TB261 225-2500 14 5 GP1441 1 Low Power broadband, 48V GaN
TB262 1000-2500 13 50 GP3441 1 Medium Power broadband, 48V GaN
Please call your local Representative or the factory for additional information.
We manufacture our products in a World Class Wafer Facility. Advanced techniques of dry etching and mask steppers are used to improve uniformity of the transistor from production batch to production batch. Sub-micron process technology is used to achieve high performance. The transistors are manufactured by ion implant diffusion techniques.
Polyfet continues to make product improvements in both her Vdmos, Ldmos and GaN transistor lines. The higher input impedance of the Vdmos makes input matching simpler, especially for broadband frequencies. The lower gain of the Vdmos facilitates simpler stabilizing circuitry at lower frequencies. The low parasitic capacitances of the Ldmos makes it suitable for high frequency operations at high efficiencies. GaN affords very high input and output impedances, faciliting extrememly simple matching networks for broadband. GaN transistors have high RF power out to output capactianceratio; thus very high efficiencies can be acheived.
Important Notice
We have renamed our Ldmos transistors with a New Product Numbering System. You can look up a cross reference and learn about this improved product I.D. system.